Product Datasheet Search Results:
5 Pages, 158 KB, Scan- IRF420
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 3.0 A, 450 V/500 V
5 Pages, 158 KB, Scan- IRF420-423
- Fairchild Semiconductor
- N-Channel Power MOSFETs 3.0 A 450 V/500 V
4 Pages, 200 KB, Original- IRF420
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF420
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 163 KB, Scan- IRF420
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A.
5 Pages, 174 KB, Scan- IRF420
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 49 KB, Original- IRF420
- Intersil Corporation
- 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 ?, N-Channel Power MOSFETs
1 Pages, 45 KB, Scan- IRF420
- International Rectifier
- 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
5 Pages, 212 KB, Scan- IRF420
- Samsung Electronics
- N-CHANNEL POWER MOSFETS
Product Details Search Results:
Irf.com/IRF420
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"8 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source ...
1312 Bytes - 18:48:09, 05 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
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| IRF4104S.pdf | 0.27 | 1 | Request | |
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| IRF4104.pdf | 0.27 | 1 | Request | |
| IRF4905L.pdf | 0.14 | 1 | Request |
