Product Datasheet Search Results:
- IRF351
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 15A, 350V/400V
- IRF351
- Fci Semiconductor
- POWER MOSFETs
- IRF351
- Frederick Components
- Power MOSFET Selection Guide
- IRF351
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
- IRF351
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 15A.
- IRF351
- General Electric
- Power Transistor Data Book 1985
- IRF351
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF351R
- Harris Semiconductor
- Power MOSFET Data Book 1990
- IRF351
- Intersil Corporation
- 13.0A and 15.0A, 350 and 400V, 0.300 and 0.400 ?, Avalanche Rated, N-Channel Power MOSFET FN1826.2
- IRF351
- International Rectifier
- TO-3 N-Channel Hexfet Power MOSFETS
- IRF3515L
- International Rectifier
- MOSFET N-CH 150V 41A TO-262 - IRF3515L
- IRF3515LPBF
- International Rectifier
- 150V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3515L with Lead Free Packaging
Product Details Search Results:
Irf.com/IRF3515L
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Datasheets":"IRF3515S/L","Rds On (Max) @ Id, Vgs":"45 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"200W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"2260pF @ 25...
1479 Bytes - 14:55:10, 14 November 2024
Irf.com/IRF3515LPBF
933 Bytes - 14:55:10, 14 November 2024
Irf.com/IRF3515S
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"45 mOhm @ 25A, 10V","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK","Other Names":"*IRF3515S","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRF3515S/L","Power - Max":"200W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Sur...
1658 Bytes - 14:55:10, 14 November 2024
Irf.com/IRF3515SPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"470 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"41 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"164 A","Channel Type":"N-CHAN...
1592 Bytes - 14:55:10, 14 November 2024
Irf.com/IRF3515STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF3515S/L","Rds On (Max) @ Id, Vgs":"45 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"200W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","...
1615 Bytes - 14:55:10, 14 November 2024
Irf.com/IRF3515STRLPBF
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"45 mOhm @ 25A, 10V","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"1","Supplier Device Package":"D2PAK","Other Names":"IRF3515STRLPBFDKR","Packaging":"Digi-Reel\u00ae","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRF3515S(LPbF)","Power - Max":"200W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB...
1736 Bytes - 14:55:10, 14 November 2024
Irf.com/IRF3515STRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF3515S/L","Rds On (Max) @ Id, Vgs":"45 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"200W","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","...
1615 Bytes - 14:55:10, 14 November 2024
Irf.com/IRF3515STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"670 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"41 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"164 A","Channel Type":"N-CHAN...
1611 Bytes - 14:55:10, 14 November 2024
Various/IRF351R
{"C(iss) Max. (F)":"2.0n","Absolute Max. Power Diss. (W)":"150","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"9","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"150n","r(DS)on Max. (Ohms)":"300m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"60","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"8.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"8.0","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packa...
1294 Bytes - 14:55:10, 14 November 2024