Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"89(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Power Dissipation":"170(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"170(W)","Continuous Drain Current":"89(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"170(W)","Continuous Drain Current":"89(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"75(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"89(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Tape and Reel","Power Dissipation":"170(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF2807Z Saber Model IRF2807Z Spice Model","Product Photos":"TO-220AB PKG","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"IRF2807Z(S,L)","Rds On (Max) @ Id, Vgs":"9.4 mOhm @ 53A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"170W","Other Names":"*IRF2807Z","Package / C...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"89(A)","Mounting":"Through Hole","Noise Figure":"Not Required dB","Drain-Source On-Volt":"75(V)","Frequency (Max)":"Not Required MHz","Pin Count":"3 +Tab","Packaging":"Rail/Tube","Power Dissipation":"170(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Output Power (Max)":"Not Required W","Rad Hardened":"No","Power Gain ":"N...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"3270pF @ 25V","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"TO-262","Datasheets":"IRF2807Z(S,L)","Rds On (Max) @ Id, Vgs":"9.4 mOhm @ 53A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"170W","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-26...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"HEXFET TO-262-3 Long Leads","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"9.4 mOhm @ 53A, 10V","Datasheets":"IRF2807Z(S,L)PbF","FET Type":"MOSFET N-Channel, Metal ...

{"Category":"MOSFET","Maximum Drain Source Voltage":"75 V","Typical Rise Time":"79 ns","Typical Turn-Off Delay Time":"40 ns","Description":"Value","Maximum Continuous Drain Current":"89 A","Package":"3TO-262","Mounting":"Through Hole","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"18 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"9.4@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"45 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"9.4 mOhm @ 53A, 10V","Datasheets":"IRF2807Z(S,L)PbF","FET Type":"MOSFET N-Chann...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF2807ZL Saber Model IRF2807ZL Spice Model","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF2807Z(S,L)","Rds On (Max) @ Id, Vgs":"9.4 mOhm @ 53A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"170W","Other Names":"*IRF2807ZS","Package / Case":"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"110nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013 Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds O...