Product Datasheet Search Results:
6 Pages, 178 KB, Scan- IRF233
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 12A, 150-200 V
4 Pages, 200 KB, Original- IRF233
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF233
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 161 KB, Scan- IRF233
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A.
2 Pages, 127 KB, Scan- IRF233
- General Electric
- Power Transistor Data Book 1985
6 Pages, 192 KB, Scan- IRF233
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 185 KB, Scan- IRF233R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 49 KB, Original- IRF233
- Intersil Corporation
- 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 ?, N-Channel Power MOSFETs
1 Pages, 42 KB, Original- IRF233
- International Rectifier
- TO-3 N-Channel Hexfet Power MOSFETS
1 Pages, 41 KB, Original- IRF233R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Various/IRF233R
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"75","g(fs) Max, (S) Trans. conduct,":"4.8","I(D) Abs. Max.(A) Drain Curr.":"5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"50n","r(DS)on Max. (Ohms)":"600m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"32","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"3.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package"...
1289 Bytes - 03:43:39, 01 April 2025
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