Product Datasheet Search Results:
9 Pages, 444 KB, Original- IPD031N06L3G
- Infineon Technologies Ag
- 100 A, 60 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
10 Pages, 444 KB, Original- IPD031N06L3GATMA1
- Infineon Technologies
- MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
Product Details Search Results:
Infineon.com/IPD031N06L3G
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"149 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0031 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","China...
1635 Bytes - 10:51:53, 28 November 2024
Infineon.com/IPD031N06L3GATMA1
{"Product Category":"MOSFET","Series":"XPD031N06","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1128 Bytes - 10:51:53, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPD031N06L3G.pdf | 0.43 | 1 | Request |
