Product Datasheet Search Results:
9 Pages, 530 KB, Original- IPB027N10N3GXT
- Infineon Technologies Ag
- 120 A, 100 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Infineon.com/IPB027N10N3GXT
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"120 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0027 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"480 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V"...
1549 Bytes - 20:51:11, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IPB027N10N3G.pdf | 0.52 | 1 | Request |
