Product Datasheet Search Results:
- HN2D01FUTE85R
- Toshiba America Electronic Components, Inc.
- 0.08 A, 3 ELEMENT, SILICON, SIGNAL DIODE
Product Details Search Results:
Toshiba.co.jp/HN2D01FUTE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Average Forward Current-Max":"0.0800 A","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.6000 W","Number of Elements":"3","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 3 ELEMENTS","Number of Terminals":"6","Reverse Recovery Time-Max":"0.0040 us","Surface Mount":"Yes"}...
1225 Bytes - 01:10:20, 25 November 2024
Documentation and Support
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ECEA1HN220UE.pdf | 0.74 | 1 | Request | |
ECEA1HN221U.pdf | 0.74 | 1 | Request | |
ECEA1HN2R2U.pdf | 0.74 | 1 | Request | |
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ECEA1HN2R2UE.pdf | 0.74 | 1 | Request | |
ECEA1HN221UE.pdf | 0.74 | 1 | Request | |
3SU1030-4HN21-0AA0-ZY15.pdf | 51.69 | 1 | Request | |
7KG6106-2HN27-0B.pdf | 1.28 | 1 | Request |