Product Datasheet Search Results:
9 Pages, 90 KB, Original- HAF2011(S)
- Renesas Technology / Hitachi Semiconductor
- Silicon N Channel MOS FET Series Power Switching
8 Pages, 42 KB, Original- HAF2011(S)
- Renesas Electronics
- 0.033 ohm, POWER, FET
Product Details Search Results:
Renesas.com/HAF2011(S)
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"LDPAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Drain-source On Resistance-Max":"0.0330 ohm","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...
1021 Bytes - 01:20:24, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 14FDZ-BT-1(S)(LF)(SN).pdf | 0.12 | 1 | Request |
