Product Datasheet Search Results:
- H5N6001P-E
- Renesas Electronics
- 20 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Renesas.com/H5N6001P-E
{"Terminal Finish":"TIN COPPER","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"20 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"80 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR",...
1499 Bytes - 20:02:33, 24 November 2024