Product Datasheet Search Results:

GS66508P-E05-TY.pdf4 Pages, 1429 KB, Original
GS66508P-E05-TY
Gan Systems
MOSFET 650V 30A E-Mode GaN Preproduction Units

Product Details Search Results:

Gansystems.com/GS66508P-E05-TY
{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"650 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"55 mOhms","Channel Mode":"Enhancement","Brand":"GaN Systems","Id - Continuous Drain Current":"30 A","Vgs th - Gate-Source Threshold Voltage":"1.6 V","Packaging":"Tray","Product Category":"MOSFET","Qg - Gate Charge":"6.5 nC","Vgs - Gate-Source Breakdown Voltage":"+/- 10 V","RoHS":"Details","Manufacturer":"GaN Systems"}...
1466 Bytes - 09:41:47, 18 December 2024

Documentation and Support

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SGS63.pdf0.031Request
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