Product Datasheet Search Results:

GS61008P-E04-TY.pdf4 Pages, 760 KB, Original
GS61008P-E04-TY
Gan Systems
MOSFET 100V 90A E-Mode GaN Preproduction Units

Product Details Search Results:

Gansystems.com/GS61008P-E04-TY
{"Mounting Style":"SMD/SMT","Vds - Drain-Source Breakdown Voltage":"100 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"7.4 mOhms","Channel Mode":"Enhancement","Brand":"GaN Systems","Id - Continuous Drain Current":"90 A","Vgs th - Gate-Source Threshold Voltage":"1.6 V","Packaging":"Tray","Product Category":"MOSFET","Qg - Gate Charge":"16 nC","Vgs - Gate-Source Breakdown Voltage":"+/- 10 V","RoHS":"Details","Manufacturer":"GaN Systems"}...
1496 Bytes - 01:47:00, 22 November 2024

Documentation and Support

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File NameFile Size (MB)DocumentMOQSupport
MBM150GS6AW.pdf0.091Request
MBB200GS6AW.pdf0.151Request
MBM300GS6AW.pdf0.091Request
MBN200GS6AW.pdf0.091Request
MBN400GS6AW.pdf0.321Request
MBM600GS6CW.pdf0.101Request
MBN300GS6AW.pdf0.081Request
MBM400GS6AW.pdf0.091Request
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ERG1FGS620D.pdf0.921Request
ERG1FGS683D.pdf0.921Request
ERG1FGS621D.pdf0.921Request