Product Datasheet Search Results:
- FSL110D1
- Fairchild Semiconductor
- 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET
- FSL110D3
- Fairchild Semiconductor
- 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET
- FSL110D
- Harris Semiconductor
- Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
- FSL110D
- Intersil Corporation
- 3.5A, 100V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
- FSL110D1
- Intersil Corporation
- 3.5A, 100V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
- FSL110D3
- Intersil Corporation
- 3.5A, 100V, 0.600 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
- FSL110D1
- International Rectifier
- 3.5 A, 100 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Harris.com/FSL110D4
{"C(iss) Max. (F)":"155p","Absolute Max. Power Diss. (W)":"15","@Pulse Width (s) (Condition)":"300u","V(BR)DSS (V)":"100","I(D) Abs. Max.(A) Drain Curr.":"2.5","@V(GS) (V) (Test Condition)":"12","t(d)off Max. (s) Off time":"30n","r(DS)on Max. (Ohms)":"600m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"10.5","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"2.5","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"1.5","Package":"TO-20...
1336 Bytes - 16:44:35, 17 November 2024
Irf.com/FSL110D1
{"Status":"DISCONTINUED","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, METAL CAN-3","Pulsed Drain Current-Max (IDM)":"10.5 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.5 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPO...
1426 Bytes - 16:44:35, 17 November 2024
Documentation and Support
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