Product Datasheet Search Results:
4 Pages, 42 KB, Original- FS1VS-16A
- Mitsubishi Electric & Electronics Usa, Inc.
- 1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 180 KB, Scan- FS1VS-16A-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 180 KB, Scan- FS1VS-16A-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 42 KB, Original- FS1VS-16A
- Mitsubishi Electric Semiconductor
- Nch POWER MOSFET
1 Pages, 55 KB, Scan- FS1VS-16A
- Powerex, Inc. - Pa
- 1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FS1VS-16A
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"3 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECT...
1438 Bytes - 06:22:44, 22 November 2024
Mitsubishichips.com/FS1VS-16A-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface M...
1498 Bytes - 06:22:44, 22 November 2024
Mitsubishichips.com/FS1VS-16A-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface M...
1500 Bytes - 06:22:44, 22 November 2024
Pwrx.com/FS1VS-16A
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface ...
1418 Bytes - 06:22:44, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| EEUFS1V152B.pdf | 0.85 | 1 | Request | |
| EEUFS1V152.pdf | 0.85 | 1 | Request | |
| EEUFS1V102L.pdf | 0.85 | 1 | Request | |
| EEUFS1V102LB.pdf | 0.85 | 1 | Request | |
| EEUFS1V182S.pdf | 0.85 | 1 | Request | |
| EEUFS1V331LB.pdf | 0.85 | 1 | Request | |
| EEUFS1V272.pdf | 0.85 | 1 | Request | |
| EEUFS1V821.pdf | 0.85 | 1 | Request | |
| EEUFS1V272B.pdf | 0.85 | 1 | Request | |
| EEUFS1V331L.pdf | 0.85 | 1 | Request | |
| EEUFS1V821B.pdf | 0.85 | 1 | Request | |
| EEUFS1V182SB.pdf | 0.85 | 1 | Request |
