Product Datasheet Search Results:
4 Pages, 44 KB, Original- FS1AS-16A
- Mitsubishi Electric & Electronics Usa, Inc.
- 1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 171 KB, Scan- FS1AS-16A-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 171 KB, Scan- FS1AS-16A-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 1 A, 800 V, 12.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 44 KB, Original- FS1AS-16A
- Mitsubishi Electric Semiconductor
- Nch POWER MOSFET
Product Details Search Results:
Mitsubishichips.com/FS1AS-16A
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"3 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECT...
1439 Bytes - 10:55:17, 24 November 2024
Mitsubishichips.com/FS1AS-16A-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface M...
1499 Bytes - 10:55:17, 24 November 2024
Mitsubishichips.com/FS1AS-16A-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"800 V","Transistor Application":"SWITCHING","Surface M...
1498 Bytes - 10:55:17, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FGFS1A-20-E050B.pdf | 2.10 | 1 | Request | |
| FGFS1A-20-E010B-G.pdf | 2.10 | 1 | Request | |
| FGFS1A-20-E025B-G.pdf | 2.10 | 1 | Request | |
| FGFS1A-20-E050B-G.pdf | 2.10 | 1 | Request | |
| FGFS1A-20-E100B.pdf | 2.10 | 1 | Request | |
| FGFS1A-20-E100B-G.pdf | 2.10 | 1 | Request | |
| FGFS1A-20-E005B-G.pdf | 2.10 | 1 | Request | |
| FGFS1A-20-E005B.pdf | 2.10 | 1 | Request | |
| FGFS1A-20-E025B.pdf | 2.10 | 1 | Request | |
| EEUFS1A562S.pdf | 0.85 | 1 | Request | |
| EEUFS1A272L.pdf | 0.85 | 1 | Request | |
| EEUFS1A752L.pdf | 0.85 | 1 | Request |
