Product Datasheet Search Results:
4 Pages, 193 KB, Scan- FS10VSJ-06-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 60 V, 0.091 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
Product Details Search Results:
Mitsubishichips.com/FS10VSJ-06-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0910 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Application":"SWITCHING","Surfac...
1519 Bytes - 16:18:29, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FGDTA-06-T100-B.pdf | 1.59 | 1 | Request | |
| FGDFB-06-T100-B.pdf | 1.59 | 1 | Request | |
| FGDCA-06-T100.pdf | 1.59 | 1 | Request | |
| FGDCA-06-T100-B.pdf | 1.59 | 1 | Request | |
| FGDFA-06-T100-BX78.pdf | 1.59 | 1 | Request |
