Product Datasheet Search Results:
4 Pages, 45 KB, Original- FS10VS-14A
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 183 KB, Scan- FS10VS-14A-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 183 KB, Scan- FS10VS-14A-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 45 KB, Original- FS10VS-14A
- Powerex Power Semiconductors
- Nch POWER MOSFET HIGH-SPEED SWITCHING USE
Product Details Search Results:
Mitsubishichips.com/FS10VS-14A
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"30 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"10 A","Transistor Application":"SWITCHING","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RE...
1446 Bytes - 19:35:08, 24 November 2024
Mitsubishichips.com/FS10VS-14A-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Transistor Application":"SWITCHING","Surface ...
1507 Bytes - 19:35:08, 24 November 2024
Mitsubishichips.com/FS10VS-14A-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Transistor Application":"SWITCHING","Surface ...
1507 Bytes - 19:35:08, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FS100R07N3E4_B11.pdf | 0.51 | 1 | Request | |
| FS100R12KT4.pdf | 0.27 | 1 | Request | |
| FS100R07N2E4.pdf | 0.50 | 1 | Request | |
| FS100R12KT4G_B11.pdf | 0.29 | 1 | Request | |
| FS100R12KS4.pdf | 0.26 | 1 | Request | |
| FS100R07N3E4.pdf | 0.50 | 1 | Request | |
| FS100R07N2E4_B11.pdf | 0.51 | 1 | Request | |
| FS100R12KT3.pdf | 0.32 | 1 | Request | |
| FS100R07PE4.pdf | 0.99 | 1 | Request | |
| FS10R06XL4.pdf | 0.23 | 1 | Request | |
| FS10R12VT3.pdf | 0.24 | 1 | Request | |
| FS100R12PT4.pdf | 0.57 | 1 | Request |
