Product Datasheet Search Results:
4 Pages, 193 KB, Scan- FS100VSJ-03-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 100 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220S
Product Details Search Results:
Mitsubishichips.com/FS100VSJ-03-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"100 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0080 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"400 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Transistor Application":"SWITCHING","Surf...
1529 Bytes - 20:27:25, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IFS100V12PT4.pdf | 0.36 | 1 | Request |
