Product Datasheet Search Results:
19 Pages, 497 KB, Original- FMW21N60GSC
- Fuji Electric Corp. Of America
- 21 A, 600 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA
19 Pages, 497 KB, Original- FMW21N60GSC-K1
- Fuji Electric Corp. Of America
- 21 A, 600 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AA
Product Details Search Results:
Fujielectric.co.jp/FMW21N60GSC
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"334 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1500 Bytes - 08:37:38, 21 December 2024
Fujielectric.co.jp/FMW21N60GSC-K1
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.5 W","Avalanche Energy Rating (Eas)":"334 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.3700 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"84 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown ...
1516 Bytes - 08:37:38, 21 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FMW23N40.pdf | 3.49 | 1 | Request |
