Product Datasheet Search Results:
15 Pages, 383 KB, Original- FMA23N50E
- Fuji Electric Corp. Of America
- 23 A, 500 V, 0.245 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Fujielectric.co.jp/FMA23N50E
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"767 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"23 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.2450 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"92 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown...
1507 Bytes - 09:55:55, 08 March 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| FMH23N50ES.pdf | 0.55 | 1 | Request | |
| FMV23N50E.pdf | 0.40 | 1 | Request | |
| FMR23N50E.pdf | 0.53 | 1 | Request | |
| FMV23N50ES.pdf | 0.54 | 1 | Request | |
| FMH23N50E.pdf | 0.55 | 1 | Request | |
| FMR23N50ES.pdf | 0.54 | 1 | Request |
