Product Datasheet Search Results:
- FMA16N50E
- Fuji Electric Corp. Of America
- 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Product Details Search Results:
Fujielectric.co.jp/FMA16N50E
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"2.16 W","Avalanche Energy Rating (Eas)":"485 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICOND...
1553 Bytes - 14:33:04, 19 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
FMI16N50ES.pdf | 0.53 | 1 | Request | |
FMP16N50E.pdf | 0.47 | 1 | Request | |
FMH16N50ES.pdf | 0.54 | 1 | Request | |
FMI16N50E.pdf | 0.42 | 1 | Request | |
FMV16N50ES.pdf | 0.52 | 1 | Request | |
FMC16N50ES.pdf | 0.53 | 1 | Request | |
FML16N50ES.pdf | 0.41 | 1 | Request | |
FMB16N50E.pdf | 0.44 | 1 | Request | |
FMH16N50E.pdf | 0.47 | 1 | Request | |
FMV16N50E.pdf | 0.41 | 1 | Request | |
FMB16N50ES.pdf | 0.53 | 1 | Request | |
FMP16N50ES.pdf | 0.53 | 1 | Request |