Product Datasheet Search Results:
5 Pages, 198 KB, Scan- FK10VS-12-T1
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 600 V, 1.18 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 198 KB, Scan- FK10VS-12-T2
- Mitsubishi Electric & Electronics Usa, Inc.
- 10 A, 600 V, 1.18 ohm, N-CHANNEL, Si, POWER, MOSFET
5 Pages, 61 KB, Original- FK10VS-12
- Mitsubishi Electric Semiconductor
- MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
1 Pages, 65 KB, Scan- FK10VS-12
- Powerex, Inc. - Pa
- 10 A, 600 V, 1.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Mitsubishichips.com/FK10VS-12-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.18 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application":"SWITCHING","Surface...
1503 Bytes - 01:20:27, 25 November 2024
Mitsubishichips.com/FK10VS-12-T2
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.18 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application":"SWITCHING","Surface...
1503 Bytes - 01:20:27, 25 November 2024
Pwrx.com/FK10VS-12
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.18 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"600 V","Transistor Application":"SWITCHING","Surface...
1421 Bytes - 01:20:27, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| DRVS-12-90-P-EX4.pdf | 81.72 | 1 | Request | |
| DRVS-12-270-P-EX4.pdf | 81.72 | 1 | Request | |
| DRVS-12.pdf | 2.59 | 1 | Request | |
| DRVS-12-180-P-EX4.pdf | 81.72 | 1 | Request | |
| DRVS-12-270-P.pdf | 81.72 | 1 | Request | |
| DRVS-12-180-P.pdf | 81.72 | 1 | Request | |
| DRVS-12-90-P.pdf | 81.72 | 1 | Request | |
| S8VS-12024.pdf | 0.33 | 1 | Request | |
| S8VS-12024BP-F.pdf | 0.33 | 1 | Request | |
| S8VS-12024B-F.pdf | 0.33 | 1 | Request | |
| S8VS-12024A-F.pdf | 0.33 | 1 | Request | |
| S8VS-12024BE.pdf | 0.33 | 1 | Request |
