Product Datasheet Search Results:

FK10VS-10-T1.pdf5 Pages, 202 KB, Scan
FK10VS-10-T1
Mitsubishi Electric & Electronics Usa, Inc.
10 A, 500 V, 1.13 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Mitsubishichips.com/FK10VS-10-T1
{"Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.13 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"30 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Application":"SWITCHING","Surfac...
1505 Bytes - 20:49:54, 25 September 2024