Product Datasheet Search Results:
6 Pages, 90 KB, Original- FHX14LG
- Sumitomo Electric Industries, Ltd.
- KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
6 Pages, 85 KB, Original- FHX14LG
- Fujitsu Limited
- KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
6 Pages, 85 KB, Original- FHX14LG-E1
- Fujitsu
- TRANS JFET N-CH 3.5V 60MA 4SMT
Product Details Search Results:
Eudyna.com/FHX14LG
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Con...
1492 Bytes - 01:34:15, 15 November 2024
Fujitsu.com/FHX14LG
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"DISK BUTTON","Transistor Application":"AMPLIFIER","Power Gain-Min (Gp)":"11 dB","Highest Frequency Band":"KU BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"GALLIUM ARSENIDE","FET Technology":"HIGH ELECTRON MOBILITY","Termina...
1371 Bytes - 01:34:15, 15 November 2024
