Product Datasheet Search Results:

FDS4559F011.pdf11 Pages, 266 KB, Original
FDS4559F011
Fairchild Semiconductor Corporation
4.5 A, 60 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

Fairchildsemi.com/FDS4559F011
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.5 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0550 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1544 Bytes - 21:02:19, 05 October 2024