Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.3V @ 250\u00b5A","Package / Case":"SOT-23-6 Thin, TSOT-23-6","Current - Continuous Drain (Id) @ 25\u00b0C":"3.4A, 2.8A","Gate Charge (Qg) @ Vgs":"13nC @ 10V","Product Photos":"SOT-23-6","PCN Assembly/Origin":"Assembly/Test Site Addition 01/Jun/2015","Rds On (Max) @ Id, Vgs":"60 mOhm @ 3.1A, 10V","Datasheets":"DMG6602SVT","FET Type":"N and P-Channel","Standard Package":"1","Drain to Source Voltage (Vdss)":"...

{"Polarity":"N/P","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1.27(W)","Continuous Drain Current":"3.4@Q 1/2.8@Q 2(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TSOT-23","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"6","Number of Elements":"2"}...