Product Datasheet Search Results:
9 Pages, 477 KB, Original- BSZ123N08NS3GXT
- Infineon Technologies Ag
- 10 A, 80 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSZ123N08NS3GXT
{"Terminal Finish":"MATTE TIN","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"110 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0123 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"160 A","Channel Type":"N-CHANNEL","FET Technolog...
1596 Bytes - 12:11:51, 28 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSZ123N08NS3G.pdf | 0.47 | 1 | Request |
