Product Datasheet Search Results:
9 Pages, 318 KB, Original- BSP300
- Infineon Technologies
- MOSFET N-CH 800V 190MA SOT-223 - BSP300 E6327
9 Pages, 331 KB, Original- BSP300 E6327
- Infineon Technologies
- MOSFET N-CH 800V 190MA SOT-223 - BSP300 E6327
8 Pages, 89 KB, Original- BSP300E6327
- Infineon Technologies
- SIPMOS Small-Signal Transistor
8 Pages, 115 KB, Original- BSP300E6433
- Infineon Technologies Ag
- 0.19 A, 800 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
9 Pages, 395 KB, Original- BSP300 H6327
- Infineon Technologies Ag
- Trans MOSFET N-CH 800V 0.19A Automotive 4-Pin(3+Tab) SOT-223 T/R
10 Pages, 396 KB, Original- BSP300H6327XUSA1
- Infineon Technologies
- MOSFET N-Ch 800V 190mA SOT-223-3
9 Pages, 331 KB, Original- BSP300 L6327
- Infineon Technologies
- MOSFET N-CH 800V 190MA SOT-223 - BSP300 L6327
25 Pages, 833 KB, Original- BSP300L6327
- Infineon Technologies Ag
- BSP300L6327
9 Pages, 331 KB, Original- BSP300L6327XT
- Infineon Technologies Ag
- Trans MOSFET N-CH 800V 0.19A 4-Pin(3+Tab) SOT-223 T/R
8 Pages, 115 KB, Original- BSP300L6433
- Infineon Technologies Ag
- 0.19 A, 800 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET
8 Pages, 89 KB, Original- BSP300
- Siemens Semiconductors
- SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
Product Details Search Results:
Infineon.com/BSP300
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"36 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1900 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.7600 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE...
1485 Bytes - 15:02:12, 04 April 2025
Infineon.com/BSP300 E6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"20 Ohm @ 190mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP300E6327T SP000011111","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP300","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting Typ...
1677 Bytes - 15:02:12, 04 April 2025
Infineon.com/BSP300E6433
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"36 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1900 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.7600 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE...
1514 Bytes - 15:02:12, 04 April 2025
Infineon.com/BSP300 H6327
{"Product Category":"MOSFET","Series":"BSP300","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP300H6327XUSA1","RoHS":"Details","Manufacturer":"Infineon"}...
1082 Bytes - 15:02:12, 04 April 2025
Infineon.com/BSP300H6327XUSA1
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP300","Rds On (Max) @ Id, Vgs":"20 Ohm @ 190mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"230pF @ 25V","Drain to Source Voltage (Vdss)":"800V","Current - Continuous Drai...
1615 Bytes - 15:02:12, 04 April 2025
Infineon.com/BSP300 L6327
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"230pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP300","Rds On (Max) @ Id, Vgs":"20 Ohm @ 190mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounti...
1630 Bytes - 15:02:12, 04 April 2025
Infineon.com/BSP300L6327
727 Bytes - 15:02:12, 04 April 2025
Infineon.com/BSP300L6327XT
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.19 A","Mounting":"Surface Mount","Drain-Source On-Volt":"800 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"20 ohm","Number of Elements":"1"}...
1548 Bytes - 15:02:12, 04 April 2025
Infineon.com/BSP300L6433
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"36 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1900 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"20 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"0.7600 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE...
1521 Bytes - 15:02:12, 04 April 2025
