Product Datasheet Search Results:

BSP110.pdf1 Pages, 87 KB, Scan
BSP110
N/a
Shortform IC and Component Datasheets (Plus Cross Reference Data)
BSP110T/R.pdf1 Pages, 39 KB, Original
BSP110T/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
BSP110.pdf13 Pages, 266 KB, Original
BSP110
Nxp Semiconductors
MOSFET N-CH 100V 520MA SOT223 - BSP110,115
BSP110,115.pdf13 Pages, 266 KB, Original
BSP110,115
Nxp Semiconductors
MOSFET N-CH 100V 520MA SOT223 - BSP110,115
BSP110135.pdf5 Pages, 93 KB, Scan
BSP110135
Nxp
325 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
BSP110T/R.pdf13 Pages, 266 KB, Original
BSP110T/R
Nxp Semiconductors / Philips Semiconductors
N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.52 A; R<sub>DS(on)</sub>: 10000@5V mOhm; V<sub>DS</sub>max: 100 V
BSP110TRL.pdf1 Pages, 55 KB, Scan
BSP110TRL
Nxp
325 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
BSP110.pdf4 Pages, 87 KB, Original
BSP110
Philips Semiconductors / Nxp Semiconductors
N-Channel Enhancement Mode Vertical D-MOS Transistor
BSP110-03.pdf13 Pages, 266 KB, Original
BSP110-03
Philips Semiconductors / Nxp Semiconductors
N-channel enhancement mode field-effect transistor
BSP110T.pdf13 Pages, 266 KB, Original
BSP110T
Philips Semiconductors / Nxp Semiconductors
Transistor Mosfet N-CH 100V 0.52A 4SOT-223 T/R

Product Details Search Results:

Nxp.com/BSP110
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown V...
1426 Bytes - 18:43:19, 25 November 2024
Nxp.com/BSP110,115
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 1mA","Package / Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"520mA (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SC-73","PCN Design/Specification":"Resin Hardener 02/Jul/2013","Rds On (Max) @ Id, Vgs":"10 Ohm @ 150mA, 5V","Datasheets":"BSP110","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Lighter Reels 02/Jan/2014","Drain to Source Voltage (Vdss)":"100V"...
1938 Bytes - 18:43:19, 25 November 2024
Nxp.com/BSP110135
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3250 A","Transistor Application":"SWITCHING","Feedback Cap-Max (Crss)":"6 pF","Number of Elements":"1","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"...
1351 Bytes - 18:43:19, 25 November 2024
Nxp.com/BSP110 T/R
{"Polarity":"N","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Rad Hardened":"No","Mounting":"Surface Mount","Noise Figure":"Not Required dB","Drain-Source On-Volt":"100 V","Frequency (Max)":"Not Required MHz","Drain-Source On-Res":"10 ohm","Power Dissipation":"6.25 W","Operating Temp Range":"-65C to 150C","Package Type":"SOT-223","Output Power (Max)":"Not Required W","Pin Count":"3 +Tab","Continuous Drain Current":"0.52 A","Power Gai...
1651 Bytes - 18:43:19, 25 November 2024
Nxp.com/BSP110TRL
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3250 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown V...
1346 Bytes - 18:43:19, 25 November 2024
Semiconductors.philips.com/BSP110T/R
{"C(iss) Max. (F)":"30p","Absolute Max. Power Diss. (W)":"1.5","g(fs) Max, (S) Trans. conduct,":"150m","r(DS)on Max. (Ohms)":"4.5","@V(DS) (V) (Test Condition)":"15","I(GSS) Max. (A)":"100n","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"200m","@(VDS) (V) (Test Condition)":"20","Package":"SOT-223","I(DSS) Min. (A)":"1.0u","Military":"N","V(BR)DSS (V)":"100","g(fs) Min. (S) Trans. conduct.":"75m","I(D) Abs. Drain Current (A)":"325m"}...
1045 Bytes - 18:43:19, 25 November 2024

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