Product Datasheet Search Results:
9 Pages, 359 KB, Original- BSC100N06LS3GXT
- Infineon Technologies Ag
- 12 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Infineon.com/BSC100N06LS3GXT
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"22 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"200 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDU...
1572 Bytes - 13:13:24, 23 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSC100N06LS3G.pdf | 0.57 | 1 | Request |
