Product Datasheet Search Results:

BLS3135-65.pdf12 Pages, 67 KB, Original
BLS3135-65
Nxp Semiconductors
TRANSISTOR RF POWER SOT422A - BLS3135-65,114
BLS3135-65,114.pdf12 Pages, 67 KB, Original
BLS3135-65,114
Nxp Semiconductors
TRANSISTOR RF POWER SOT422A - BLS3135-65,114
BLS3135-65I,112.pdf14 Pages, 262 KB, Original
BLS3135-65 TRAY.pdf12 Pages, 67 KB, Original
BLS3135-65 TRAY
Nxp Semiconductors / Philips Semiconductors
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 65 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us
BLS3135-65.pdf12 Pages, 67 KB, Original

Product Details Search Results:

Nxp.com/BLS3135-65,114
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"8A","Frequency - Transition":"3.5GHz","Noise Figure (dB Typ @ f)":"-","Transistor Type":"NPN","Product Photos":"SOT-422A","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"4","Voltage - Collector Emitter Breakdown (Max)":"75V","Supplier Device Package":"CDFM2","Packaging":"Tray","Datasheets":"BLS3135-65","Power - Max":"200W","Gain":"7dB","Package / Case":"SOT-422A","Mounting Type":"Surface Mount","DC Current Gain ...
1511 Bytes - 10:01:29, 05 November 2024
Nxp.com/BLS3135-65I,112
732 Bytes - 10:01:29, 05 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
BLS3135-65.pdf0.071Request
BLS3135-65I.pdf8.361Request