Datasheet.Directory

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMA...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC\/EPOXY","Transistor Polarity":"NPN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Terminal Positi...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"S...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT, PLASTIC PACKAGE-3","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"0.5000 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"300 MHz","Collector Current-Max (IC)":"0.1000 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"S...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Voltage - Collector Emitter Breakdown (Max)":"30V","Power - Max":"500mW","Packaging":"Bulk","Datasheets":"BC546-50 Datasheet","Current - Collector Cutof...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Max)":"30V","Pa...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"110 @ 2mA, 5V","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Current - Collector Cutoff (Max)":"15nA (ICBO)","Series":"-","Standard Package":"2,000","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"TO-92-3","Packaging":"Bul...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Ma...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Ma...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","Frequency - Transition":"300MHz","Transistor Type":"NPN","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"600mV @ 5mA, 100mA","Supplier Device Package":"TO-92-3","Series":"-","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA) Formed Leads","PCN Design\/Specification":"Copper Lead Frame 12\/Oct\/2007","Voltage - Collector Emitter Breakdown (Ma...

{"Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"TO-92, 3 PIN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Package Style":"CYLINDRICAL","DC Current Gain-Min (hFE)":"110","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"150 MHz","Collector Current-Max (IC)":"0.1000 A","Transistor Element Material":"SILICON","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"R...

{"Terminal Finish":"MATTE TIN","Transistor Polarity":"NPN","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.6250 W","Collector Current-Max (IC)":"0.1000 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Collector-emitter Voltage-Max":"30 V","Terminal Position":"BOTTOM","Transistor Application":"AMPL...