Product Datasheet Search Results:
2 Pages, 33 KB, Scan- BAS28TR
- Central Semiconductor Corp.
- 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
2 Pages, 33 KB, Scan- BAS28TR13
- Central Semiconductor Corp.
- 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
2 Pages, 33 KB, Scan- BAS28TR13LEADFREE
- Central Semiconductor Corp.
- 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
2 Pages, 33 KB, Scan- BAS28TRLEADFREE
- Central Semiconductor Corp.
- 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
7 Pages, 36 KB, Original- BAS28TR
- Philips Semiconductors / Nxp Semiconductors
- High-speed double diode
Product Details Search Results:
Centralsemi.com/BAS28TR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"85 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.3500 W","Average Forward Current-Max":"0.2500 A","Number of Elements":"2","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 2 ELEMENTS","Number of Terminals":"4","Reverse Recovery Time-Max":"0.0060 ...
1233 Bytes - 23:04:45, 18 December 2024
Centralsemi.com/BAS28TR13
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"85 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.3500 W","Average Forward Current-Max":"0.2500 A","Number of Elements":"2","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 2 ELEMENTS","Number of Terminals":"4","Reverse Recovery Time-Max":"0.0060 ...
1243 Bytes - 23:04:45, 18 December 2024
Centralsemi.com/BAS28TR13LEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"85 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.3500 W","Average Forward Current-Max":"0.2500 A","Number of Elements":"2","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 2 ELEMENTS","Number of ...
1342 Bytes - 23:04:45, 18 December 2024
Centralsemi.com/BAS28TRLEADFREE
{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"MATTE TIN (315)","Package Body Material":"PLASTIC/EPOXY","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Rep Pk Reverse Voltage-Max":"85 V","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.3500 W","Average Forward Current-Max":"0.2500 A","Number of Elements":"2","EU RoHS Compliant":"Yes","Terminal Position":"DUAL","Diode Type":"SIGNAL DIODE","Package Shape":"RECTANGULAR","Configuration":"SEPARATE, 2 ELEMENTS","Number of ...
1330 Bytes - 23:04:45, 18 December 2024
Documentation and Support
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| FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
| SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
| DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf | 1.46 | 1 | Request | |
| DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf | 1.43 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf | 1.32 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
| DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
| DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
| DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
| DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |
