Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"42(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail\/Tube","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"IPAK","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"75","PCN Design\/Specification":"Leadframe Update 02\/Jun\/2015 Leadframe Retraction 03\/Jun\/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRLR2905","Rds On (Max) @ Id, Vgs":"27 mOhm @ 25A, 10V","FET Type":"MOSFET N-Channel, Metal Oxid...