Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"87(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Family":"FETs - Single","Product Photos":"TO-220AB PKG","Vgs(th) (Max) @ Id":"4V @ 100\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-220-3","Supplier Device Package":"TO-220AB","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRF3504","Rds On (Max) @ Id, Vgs":"9.2 mOhm @ 52A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"143W","Standard Package":...