Product Datasheet Search Results:
- APTGS50X170E2
- Advanced Power Technology
- 3 Phase Bridge - IGBT
- APTGS50X170E2
- Microsemi Corp.
- 100 A, 1700 V, N-CHANNEL IGBT
- APTGS50X170E2G
- Microsemi Corp.
- 100 A, 1700 V, N-CHANNEL IGBT
Product Details Search Results:
Microsemi.com/APTGS50X170E2
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-17","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"930 ns","Collector-emitter Voltage-Max":"1700 V","Transistor Application":"MOTOR CONTROL","Turn-on Time-Nom (ton)":"200 ns","Collector Current-Max (IC)":"100 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Ty...
1371 Bytes - 14:32:00, 28 November 2024
Microsemi.com/APTGS50X170E2G
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"UNSPECIFIED","Turn-off Time-Nom (toff)":"930 ns","Collector Current-Max (IC)":"100 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"200 ns","EU RoHS Compliant":"Yes","Configuration":"BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"1700 V","Channel Type":"N-CHANNEL...
1430 Bytes - 14:32:00, 28 November 2024
Documentation and Support
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FE_70E2E544.pdf | 32.61 | 1 | Request | |
PVH098R13AJ70E242009001A_D1AA000A.pdf | 2.40 | 1 | Request | |
PVH098R01AJ70E2520040010_01AE010A.pdf | 2.40 | 1 | Request | |
EA_770E29EB.pdf | 0.07 | 1 | Request | |
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PVH131L03AF70E252010001A_D1AA010A.pdf | 2.40 | 1 | Request | |
PVH098R13AJ70E202009001A_D1AA010A.pdf | 2.40 | 1 | Request |