Product Datasheet Search Results:
- APT6040
- Advanced Power Technology
- N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
- APT6040AN
- Advanced Power Technology
- High Voltage Power MOSFETs
- APT6040BN
- Advanced Power Technology
- N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
- APT6040BVFR
- Advanced Power Technology
- POWER MOS V FREDFET
- APT6040BVFRG
- Advanced Power Technology
- POWER MOS V FREDFET
- APT6040DN
- Advanced Power Technology
- APT Power MOS IV Commercial and Custom DIE
- APT6040SVFR
- Advanced Power Technology
- POWER MOS V FREDFET
- APT6040SVFRG
- Advanced Power Technology
- POWER MOS V FREDFET
- APT6040BN
- Microsemi Corp.
- 18 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
- APT6040BNG
- Microsemi
- Power MOSFET N-CH 600V 18A
Product Details Search Results:
Advancedpower.com/APT6040AN
{"C(iss) Max. (F)":"2.4n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"230","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"15.5","Package":"TO-3","Military":"N","r(DS)on Max. (Ohms)":"400m"}...
908 Bytes - 07:07:31, 22 November 2024
Advancedpower.com/APT6040BNR
{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"19","Package":"TO-247AD","Military":"N","r(DS)on Max. (Ohms)":"400m"}...
875 Bytes - 07:07:31, 22 November 2024
Advancedpower.com/APT6040DN
{"@V(DS) (V) (Test Condition)":"1k","Package":"Chip","I(DSS) Max. (A)":"250u","I(GSS) Max. (A)":"100n","V(BR)DSS (V)":"600","@I(D) (A) (Test Condition)":"1","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"400m","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2"}...
796 Bytes - 07:07:31, 22 November 2024
Advancedpower.com/APT6040HN
{"C(iss) Max. (F)":"2.95n","Absolute Max. Power Diss. (W)":"250","Package":"TO-258iso","V(BR)DSS (V)":"600","I(D) Abs. Drain Current (A)":"16.5","Military":"N","r(DS)on Max. (Ohms)":"400m"}...
703 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BN
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package...
1408 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BNG
950 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BVFR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1499 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BVFRG
{"Terminal Finish":"TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakd...
1509 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BVR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1491 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BVRG
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"16(A)","Mounting":"Through Hole","Drain-Source On-Volt":"600(V)","Packaging":"Rail/Tube","Power Dissipation":"250(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1450 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040SVFR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Brea...
1502 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040SVFRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL",...
1578 Bytes - 07:07:31, 22 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
5TT6040-0Y.pdf | 0.21 | 1 | Request |