Product Datasheet Search Results:

APT6040.pdf4 Pages, 37 KB, Original
APT6040
Advanced Power Technology
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT6040AN.pdf4 Pages, 211 KB, Original
APT6040BN.pdf4 Pages, 37 KB, Original
APT6040BN
Advanced Power Technology
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
APT6040BVFR.pdf4 Pages, 149 KB, Original
APT6040BVFRG.pdf4 Pages, 149 KB, Original
APT6040DN.pdf4 Pages, 383 KB, Original
APT6040DN
Advanced Power Technology
APT Power MOS IV Commercial and Custom DIE
APT6040SVFR.pdf4 Pages, 149 KB, Original
APT6040SVFRG.pdf4 Pages, 149 KB, Original
APT6040BN.pdf4 Pages, 37 KB, Original
APT6040BN
Microsemi Corp.
18 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT6040BNG.pdf1 Pages, 45 KB, Original
APT6040BNG
Microsemi
Power MOSFET N-CH 600V 18A

Product Details Search Results:

Advancedpower.com/APT6040AN
{"C(iss) Max. (F)":"2.4n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"230","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"15.5","Package":"TO-3","Military":"N","r(DS)on Max. (Ohms)":"400m"}...
908 Bytes - 07:07:31, 22 November 2024
Advancedpower.com/APT6040BNR
{"C(iss) Max. (F)":"2.95n","t(r) Max. (s) Rise time":"46n","Absolute Max. Power Diss. (W)":"310","I(GSS) Max. (A)":"100n","I(DSS) Min. (A)":"250u","@(VDS) (V) (Test Condition)":"30","V(BR)DSS (V)":"600","V(BR)GSS (V)":"30","t(f) Max. (s) Fall time.":"46n","I(D) Abs. Drain Current (A)":"19","Package":"TO-247AD","Military":"N","r(DS)on Max. (Ohms)":"400m"}...
875 Bytes - 07:07:31, 22 November 2024
Advancedpower.com/APT6040DN
{"@V(DS) (V) (Test Condition)":"1k","Package":"Chip","I(DSS) Max. (A)":"250u","I(GSS) Max. (A)":"100n","V(BR)DSS (V)":"600","@I(D) (A) (Test Condition)":"1","Military":"N","@V(GS) (V) (Test Condition)":"10","r(DS)on Max. (Ohms)":"400m","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2"}...
796 Bytes - 07:07:31, 22 November 2024
Advancedpower.com/APT6040HN
{"C(iss) Max. (F)":"2.95n","Absolute Max. Power Diss. (W)":"250","Package":"TO-258iso","V(BR)DSS (V)":"600","I(D) Abs. Drain Current (A)":"16.5","Military":"N","r(DS)on Max. (Ohms)":"400m"}...
703 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BN
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"72 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"18 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package...
1408 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BNG
950 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BVFR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1499 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BVFRG
{"Terminal Finish":"TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakd...
1509 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BVR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS B...
1491 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040BVRG
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"16(A)","Mounting":"Through Hole","Drain-Source On-Volt":"600(V)","Packaging":"Rail/Tube","Power Dissipation":"250(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-247","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1450 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040SVFR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Brea...
1502 Bytes - 07:07:31, 22 November 2024
Microsemi.com/APT6040SVFRG
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"960 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.4000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL",...
1578 Bytes - 07:07:31, 22 November 2024

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