Product Datasheet Search Results:

AP9997GJ.pdf4 Pages, 98 KB, Original
AP9997GJ
Advanced Power Electronics Corp. Usa
11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9997GJ-HF.pdf4 Pages, 98 KB, Original
AP9997GJ-HF
Advanced Power Electronics Corp. Usa
11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

Product Details Search Results:

A-power.com.tw/AP9997GJ
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"30 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"11 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"REC...
1432 Bytes - 07:33:40, 25 November 2024
A-power.com.tw/AP9997GJ-HF
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3","Pulsed Drain Current-Max (IDM)":"30 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"11 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Pa...
1468 Bytes - 07:33:40, 25 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
CVCS_25_C3_W_125_20_AP99.pdf1.831Request
AP9920CS2000.pdf1.281Request
AP9927.pdf1.421Request
AP9926.pdf1.421Request
AP9922S.pdf1.281Request
AP9922.pdf1.281Request
AP9920CS.pdf1.281Request
AP9925.pdf1.421Request