Product Datasheet Search Results:
7 Pages, 121 KB, Original- AP4509AGM-HF
- Advanced Power Electronics Corp. Usa
- 11.2 A, 30 V, 0.01 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP4509AGM-HF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11.2 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"40 A","Channel Type":"N-CHANNEL AND P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakd...
1569 Bytes - 07:30:18, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1SAP450900R0001.pdf | 0.21 | 1 | Request |
