Product Datasheet Search Results:
4 Pages, 72 KB, Original- AP4407GM
- Advanced Power Electronics Corp. Usa
- 10.7 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET
5 Pages, 207 KB, Original- AP4407GM-HF
- Advanced Power Electronics Corp. Usa
- 10.7 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP4407GM
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...
1481 Bytes - 01:09:19, 29 November 2024
A-power.com.tw/AP4407GM-HF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"10.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0140 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"50 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...
1520 Bytes - 01:09:19, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1SAP440700R0001.pdf | 0.11 | 1 | Request |
