Product Datasheet Search Results:
4 Pages, 94 KB, Original- AP2301GN
- Advanced Power Electronics Corp. Usa
- 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
4 Pages, 96 KB, Original- AP2301GN-HF
- Advanced Power Electronics Corp. Usa
- 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP2301GN
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","...
1486 Bytes - 18:34:38, 06 October 2024
A-power.com.tw/AP2301GN-HF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","...
1522 Bytes - 18:34:38, 06 October 2024
