Product Datasheet Search Results:
4 Pages, 94 KB, Original- AP2301GN
- Advanced Power Electronics Corp. Usa
- 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
4 Pages, 96 KB, Original- AP2301GN-HF
- Advanced Power Electronics Corp. Usa
- 2.6 A, 20 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP2301GN
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","T...
1486 Bytes - 23:02:40, 25 November 2024
A-power.com.tw/AP2301GN-HF
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.38 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"20 V","T...
1522 Bytes - 23:02:40, 25 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1SAP230900R0000.pdf | 0.11 | 1 | Request | |
| 1SAP230500R0000.pdf | 0.12 | 1 | Request | |
| AP2308G8ST.pdf | 2.04 | 1 | Request | |
| AP2308G10ST.pdf | 2.04 | 1 | Request |
