Product Datasheet Search Results:

AP1R803GMT-HF.pdf4 Pages, 94 KB, Original
AP1R803GMT-HF
Advanced Power Electronics Corp. Usa
170 A, 30 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

A-power.com.tw/AP1R803GMT-HF
{"Terminal Form":"FLAT","Power Dissipation Ambient-Max":"5 W","Avalanche Energy Rating (Eas)":"28.8 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"170 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0019 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1608 Bytes - 06:59:45, 29 November 2024

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