Product Datasheet Search Results:

AP10N70R.pdf4 Pages, 102 KB, Original
AP10N70R
Advanced Power Electronics Corp. Usa
10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AP10N70R-A.pdf4 Pages, 102 KB, Original
AP10N70R-A
Advanced Power Electronics Corp. Usa
10 A, 650 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA

Product Details Search Results:

A-power.com.tw/AP10N70R
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, TO-262, 3 PIN","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Avalanche Energy Rating (Eas)":"50 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"10 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type"...
1477 Bytes - 09:38:06, 25 November 2024
A-power.com.tw/AP10N70R-A
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"ROHS COMPLIANT, TO-262, 3 PIN","Pulsed Drain Current-Max (IDM)":"40 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"IN-LINE","Avalanche Energy Rating (Eas)":"50 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"10 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type"...
1489 Bytes - 09:38:06, 25 November 2024

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