Product Datasheet Search Results:
- AP0904GMT-HF
- Advanced Power Electronics Corp. Usa
- 17.5 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
A-power.com.tw/AP0904GMT-HF
{"Terminal Form":"FLAT","Avalanche Energy Rating (Eas)":"28.8 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"17.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0095 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"160 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"40 V","Tra...
1538 Bytes - 06:25:46, 29 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
File Name | File Size (MB) | Document | MOQ | Support |
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4GAAHAAP090000X.pdf | 0.04 | 1 | Request | |
4GAAHAAP0900L2X.pdf | 0.06 | 1 | Request | |
4GAAHAAP0900L20.pdf | 0.04 | 1 | Request | |
4GAAHAAP0900000.pdf | 0.04 | 1 | Request |