Product Datasheet Search Results:
4 Pages, 94 KB, Original- AP0603GM
- Advanced Power Electronics Corp. Usa
- 16.3 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 61 KB, Original- AP0603GMA
- Advanced Power Electronics Corp. Usa
- 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
4 Pages, 95 KB, OriginalProduct Details Search Results:
A-power.com.tw/AP0603GM
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0060 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...
1485 Bytes - 15:57:26, 25 November 2024
A-power.com.tw/AP0603GMA
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"29 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0060 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"300 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Tr...
1516 Bytes - 15:57:26, 25 November 2024
A-power.com.tw/AP0603GM-HF
{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE POWER"}...
763 Bytes - 15:57:26, 25 November 2024
Documentation and Support
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