Product Datasheet Search Results:

AP0403GM.pdf4 Pages, 96 KB, Original
AP0403GM
Advanced Power Electronics Corp. Usa
18.7 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET

Product Details Search Results:

A-power.com.tw/AP0403GM
{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18.7 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0045 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","T...
1489 Bytes - 08:09:15, 29 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
3RT1015-2AP04-3MA0.pdf22.391Request
3RT1036-3AP04-1AA0.pdf1.731Request
3RT2036-1AP04.pdf13.761Request
3RT2028-1AP04-ZX95.pdf1.731Request
3RT2023-1AP04.pdf13.761Request
3RT2027-2AP04-ZX95.pdf1.731Request
3RT1034-3AP04.pdf22.391Request
3RT1036-1AP04-3MA0.pdf22.391Request
6FC5303-0AP04-0AA0.pdf4.681Request
3RT1046-1AP04.pdf22.391Request
3RT2026-2AP04-ZX95.pdf1.731Request
3RT1024-3AP04-1AA0.pdf22.391Request