Product Datasheet Search Results:

AP03N70H.pdf6 Pages, 215 KB, Original
AP03N70H
Advanced Power Electronics Corp. Usa
2.5 A, 700 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP03N70H-A-HF.pdf4 Pages, 98 KB, Original
AP03N70H-A-HF
Advanced Power Electronics Corp. Usa
3.3 A, 650 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP03N70H-H.pdf4 Pages, 40 KB, Original
AP03N70H-H
Advanced Power Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product Details Search Results:

A-power.com.tw/AP03N70H
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"31 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4.4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"700 V","Trans...
1495 Bytes - 21:19:12, 25 November 2024
A-power.com.tw/AP03N70H-A-HF
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"3.1 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3.6 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"13.2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"650 V","T...
1569 Bytes - 21:19:12, 25 November 2024

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