Product Datasheet Search Results:

AP02N90H.pdf4 Pages, 63 KB, Original
AP02N90H
Advanced Power Electronics Corp. Usa
1.9 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP02N90H-HF.pdf4 Pages, 63 KB, Original
AP02N90H-HF
Advanced Power Electronics Corp. Usa
1.9 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

Product Details Search Results:

A-power.com.tw/AP02N90H
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"18 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V","Trans...
1495 Bytes - 06:36:50, 25 November 2024
A-power.com.tw/AP02N90H-HF
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"18 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"7.2 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"900 V","Trans...
1530 Bytes - 06:36:50, 25 November 2024

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