Product Datasheet Search Results:
4 Pages, 230 KB, Original- 2SK3974-01L
- Fuji Electric Corp. Of America
- 1 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK3974-01L
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1.04 W","Avalanche Energy Rating (Eas)":"129 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"2 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR"...
1531 Bytes - 22:54:05, 18 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK2874-01L.pdf | 0.08 | 1 | Request | |
| 2SK3674-01L.pdf | 0.26 | 1 | Request | |
| 2SJ474-01L.pdf | 0.52 | 1 | Request | |
| 2SK3774-01L.pdf | 0.14 | 1 | Request |
