Product Datasheet Search Results:
2 Pages, 45 KB, Original- 2SK3651-01MR
- Fuji Electric Corp. Of America
- 25 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fujielectric.co.jp/2SK3651-01MR
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-3PF, 3 PIN","Pulsed Drain Current-Max (IDM)":"100 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"25 A","Case Connection":"ISOLATED","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Channel Type":"N-CHANNEL","Dr...
1355 Bytes - 15:04:35, 19 December 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SK3651-01R.pdf | 0.11 | 1 | Request |
