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2SK3376MFV-B.pdf6 Pages, 154 KB, Original
2SK3376MFV-BK.pdf6 Pages, 154 KB, Original

Product Details Search Results:

Toshiba.co.jp/2SK3376MFV-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1C, VESM, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.40E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR",...
1312 Bytes - 03:46:16, 24 November 2024
Toshiba.co.jp/2SK3376MFV-BK
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-1L1C, VESM, 3 PIN","Terminal Form":"FLAT","Operating Mode":"DEPLETION","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"3.90E-4 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"JUNCTION","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN DIODE AND RESISTOR",...
1317 Bytes - 03:46:16, 24 November 2024

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